MBE growth of graded index AlGaInAs MQW lasers on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Fabrication and characterisation of long-wavelength, GaInAs/AlGaInAs/InP modified-MQW lasers
2. Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m
3. Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free MBE and operating in 1.5–1.6 μm range
4. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
5. Room-temperature CW operation of MBE-grown GaInAs/AlInAs mow lasers in 1.5μm range
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1. ‘Quantum effects’ for classical light in modern waveguide circuits;Laser Physics Letters;2019-04-12
2. Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate;Journal of Applied Physics;1998-06
3. Raman investigation of molecular beam epitaxy grown InGaAlAs epilayers lattice matched to InP for low Al concentrations;Journal of Applied Physics;1998-02-15
4. Barrier composition dependence of the emission properties of quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;1997-03
5. Photoluminescence observations in band‐gap tailored InGaAlAs epilayers lattice matched to InP substrate;Journal of Applied Physics;1996-10-15
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