Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367443
Reference37 articles.
1. Optically pumped 1.55‐μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy
2. Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy
3. Molecular-beam epitaxial growth of graded band-gap quaternary GaxAlyIn1−x−yAs multilayer heterostructures on InP: Application to a novel avalanche photodiode with an ultrahigh ionization ratio
4. MBE growth of graded index AlGaInAs MQW lasers on InP
5. High-speed AlGaInAs/AlInAs multiple quantum well pin photodiodes
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1. Numerical Simulation of Tunneling Transmission Spectra of Quantum Cascade Lasers;2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO);2020-07
2. Theoretical simulation of quantum cascade lasers based on InGaAs/AlInAs and InGaAs/AlAsSb quantum wells;IOP Conference Series: Materials Science and Engineering;2020-05-01
3. Optical Modulation by Conducting Interfaces;IEEE Journal of Quantum Electronics;2013-07
4. Multiple gain mechanisms integrated in APDs biased below breakdown for sensitivity improvement;SPIE Proceedings;2013-05-29
5. A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP;Applied Physics B;2010-04-09
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