Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free MBE and operating in 1.5

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Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free MBE and operating in 1.5–1.6 μm range

Published:1989 Issue:25 Volume:25 Page:1731
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Quillec M.,Allovon M.,Brillouet F.,Gloukhian A.,Praseuth J.P.,Sermage B.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19891158?crawler=true&mimetype=application/pdf

Reference7 articles.

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.58-μm lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers;IEEE Photonics Technology Letters;2000-01

2. Luminescence anomaly in band gap tailored In0.53(GaxAl1 − x)0.47As quaternary alloy grown by molecular beam epitaxy;Journal of Crystal Growth;1997-05

3. Improved reproducibility of AiGalnAs laser threshold by InP substrate deoxidation under phosphorous flux;Journal of Electronic Materials;1997-05

4. Molecular-beam epitaxy of high quality lattice matched In1−x−yGaxAlyAs epitaxial layers on InP substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05

5. Molecular beam epitaxy of AlGaInAs on patterned InP substrates for optoelectronic applications;Microelectronics Journal;1995-12

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