Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

Published:2016-08-28 Issue:8 Volume:120 Page:085309
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fleischmann C.¹²,Lieten R. R.¹²,Hermann P.³^ORCID,Hönicke P.³,Beckhoff B.³,Seidel F.¹²⁴,Richard O.²,Bender H.²,Shimura Y.¹²,Zaima S.⁵,Uchida N.⁶,Temst K.¹,Vandervorst W.¹²,Vantomme A.¹

Affiliation:

1. Instituut voor Kern-en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium

2. imec, Kapeldreef 75, 3001 Leuven, Belgium

3. Physikalisch-Technische Bundesanstalt (PTB), Abbestraße 2-12, 10587 Berlin, Germany

4. Institut für Elektronik-und Sensormaterialien, TU Bergakademie Freiberg, Gustav-Zeuner-Str. 3, 09599 Freiberg, Germany

5. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

6. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba West SCR, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

Funder

EURAMET - European Metrology Research Program

Fonds Wetenschappelijk Onderzoek (FWO)

Bijzonder Onderzoeksfonds (BOF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4961396

Reference50 articles.

1. Possibility of increased mobility in Ge-Sn alloy system