The thermal stability of epitaxial GeSn layers-Reference-Cited by-同舟云学术

The thermal stability of epitaxial GeSn layers

Published:2018-07 Issue:7 Volume:6 Page:076108
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Zaumseil P.¹,Hou Y.¹,Schubert M. A.¹,von den Driesch N.²,Stange D.²,Rainko D.²,Virgilio M.³,Buca D.²,Capellini G.¹⁴

Affiliation:

1. IHP, 15236 Frankfurt (Oder), Germany

2. Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies (JARA-FIT), Forschungszentrum Jülich, 52425 Jülich, Germany

3. Dipartimento di Fisica “E. Fermi,” Università di Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy

4. Dipartimento di Scienze, Università Roma Tre, Viale G. Marconi 446, I-00146 Rome, Italy

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5036728

Reference24 articles.

1. Silicon Photonic Circuits: On-CMOS Integration, Fiber Optical Coupling, and Packaging

2. Lasing in direct-bandgap GeSn alloy grown on Si

3. An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

4. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

5. Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

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