The mole fraction effect on the elastic properties of the Ge(1-x)Snx alloys

Author:

Touati Ibtissem,Doghmane Houssem Eddine,Khoualdia Assia,Doghmane Abdellaziz,Guernoub Souhir

Publisher

Elsevier BV

Reference53 articles.

1. Growth and characterization of Ge1 − yCy/Si superlattice structures on Si substrates;Brunner;Appl. Surf. Sci.,1996

2. Full potential calculation of structural, electronic and elastic properties of alkaline earth oxides MgO, CaO and SrO, Physica B;Sahnouna;Condensed Matter,2004

3. Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys;Attiaoui;J. Appl. Phys.,2014

4. SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications;Wirths;Thin solid Film,2014

5. Thermal conductivity of pure and impure silicon, silicon carbide, and diamond;Scace;J. Appl. Phys.,1964

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