Tri-gate GaN junction HEMT-Reference-Cited by-同舟云学术

Tri-gate GaN junction HEMT

Published:2020-10-05 Issue:14 Volume:117 Page:143506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ma Yunwei¹²,Xiao Ming¹²^ORCID,Du Zhonghao³^ORCID,Yan Xiaodong³^ORCID,Cheng Kai⁴,Clavel Michael²^ORCID,Hudait Mantu K.²,Kravchenko Ivan⁵^ORCID,Wang Han³,Zhang Yuhao¹²^ORCID

Affiliation:

1. Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA

2. The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA

3. Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90086, USA

4. Enkris Semiconductor Inc., Suzhou 215123, China

5. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, USA

Funder

Power Management Consortium

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0025351

Reference39 articles.

1. GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

2. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

3. FinFETs: From Devices to Architectures

4. Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

5. Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

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