Author:
Liu Shenghou,Cai Yong,Gu Guodong,Wang Jinyan,Zeng Chunhong,Shi Wenhua,Feng Zhihong,Qin Hua,Cheng Zhiqun,Chen Kevin J.,Zhang Baoshun
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
93 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Barrier and channel thickness engineering to optimize fin height for enhancement mode Al0.3Ga0.7N/GaN FinHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-14
2. Electrical Performance Analysis of AlGaN/GaN Fin-HEMTs with Different Gate Structures by TCAD Simulation;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach;Semiconductor Science and Technology;2023-05-30
4. Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs;Semiconductor Science and Technology;2023-02-16
5. Enhancement-Mode AlN/GaN Fin-type High Electron Mobility Transistor with Low Knee Voltage;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27