Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation-Reference-Cited by-同舟云学术

Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation

Published:2017-09 Issue:9 Volume:7 Page:095320
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Li Ganglong¹,Wu Houya¹,Luo Honglong¹,Chen Zhuo¹,Tay Andrew A. O.¹,Zhu Wenhui¹

Affiliation:

1. State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electronical Engineering, Central South University, Changsha, Hunan 410083, China

Funder

National Basic Research Program of China

State Key Laboratory of High Perfornance Complex Manufacturing

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4997677

Reference30 articles.

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2. Hybrid Au-Adhesive Bonding Using Planar Adhesive Structure for 3-D LSI

3. Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition

4. Recent Advances and New Trends in Flip Chip Technology

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