Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Extreamly Advanced Cu Interconnect with Selective ALD Barrier for High Performance Logic Device;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05
2. Galvanic Corrosion Effect of Co Liner on ALD TaN Barrier;2022 IEEE International Interconnect Technology Conference (IITC);2022-06-27
3. The via resistance analysis at ALD-to-PVD TaN transition layer;2021 IEEE International Interconnect Technology Conference (IITC);2021-07-06
4. (Invited) Developments of ALD Processes: Experiments and Thermodynamic Evaluations;ECS Transactions;2019-12-17
5. Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation;AIP Advances;2017-09
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