Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123127
Reference15 articles.
1. Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP
2. InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer
3. Microwave performance of a Ga0.20In0.80P/Ga0.47In0.53As/InP HFET grown with MOVPE
4. Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application
5. Defects in epitaxial multilayers
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1. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy;Journal of Applied Physics;2015-12-09
2. Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures;Applied Physics Letters;2009-08-03
3. Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling;Journal of Physics D: Applied Physics;2009-03-02
4. Growth of strained Ga1−xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides;Journal of Crystal Growth;2001-07
5. Relationship between surface reconstruction and morphology of strained Ga1−xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy;Applied Physics Letters;2001-05-07
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