Microwave performance of a Ga0.20In0.80P/Ga0.47In0.53As/InP HFET grown with MOVPE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950517?crawler=true&mimetype=application/pdf
Reference6 articles.
1. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
2. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
3. High breakdown voltage InGaAs/InAlAs HFET using In0.5Ga0.5P spacer layer
4. InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer
5. Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA
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1. Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages;Superlattices and Microstructures;2008-02
2. Device Technologies for RF Front-End Circuits in Next-Generation Wireless Communications;Proceedings of the IEEE;2004-02
3. Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP;Applied Physics Letters;1999-01-04
4. Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-09
5. Room temperature operation of GaxIn1−xP/Ga0.47In0.53As resonant tunneling diodes;Journal of Crystal Growth;1998-06
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