Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941277?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors
2. The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems
3. Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP
4. High-performance highly strained Ga/sub 0.23/In/sub 0.77/As/Al/sub 0.48/In/sub 0.52/As MODFET's obtained by selective and shallow etch guide recess techniques
5. InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources;Progress in Crystal Growth and Characterization of Materials;2000-01
2. Metal organic vapour-phase epitaxy (MOVPE) growth of InP and InGaAs using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2 ambient;Journal of Crystal Growth;1999-07
3. CCl4‐doped semi‐insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors;Applied Physics Letters;1996-08-19
4. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Microelectronics Journal;1996-07
5. High frequency and low noise C-doped GaInP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP;Electronics Letters;1996
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