Relationship between surface reconstruction and morphology of strained Ga1−xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1371242
Reference20 articles.
1. Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strainedInxGa1−xAslayers on InP(001)
2. Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
3. Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension
4. Misfit strain, relaxation, and band‐gap shift in GaxIn1−xP/InP epitaxial layers
5. Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metamorphic growth of tensile strained GaInP on GaAs substrate;Journal of Crystal Growth;2010-10
2. Optical properties and carrier dynamics of InP quantum dots embedded in GaP;Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII;2004-06-16
3. Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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