Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362556
Reference21 articles.
1. Generation of misfit dislocations in semiconductors
2. Orthorhombic distortion of mismatched In X Ga1−X As/InP heterostructures
3. Device quality AlGaAs/GaAs heterostructures grown in a multichamber organometallic vapor phase epitaxial apparatus
4. Characterization and elimination of surface defects in Gax In1−xP grown by organometallic vapor phase epitaxy
5. Chemical ordering in GaxIn1−xP semiconductor alloy grown by metalorganic vapor phase epitaxy
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1. Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers;Semiconductor Science and Technology;2020-08-25
2. Strain relaxation in low-mismatched GaAs/GaAs1-xSbx/GaAs heterostructures;Acta Materialia;2019-01
3. Anisotropic distribution of microstructure in compressively strained InP/GaAs epitaxial layers;Superlattices and Microstructures;2018-10
4. Anisotropic distribution of dislocations density in tensile strained GaP/GaAs epilayers;Vacuum;2018-08
5. Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures;Scripta Materialia;2018-08
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