Characterization and elimination of surface defects in Gax In1−xP grown by organometallic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Se‐related deep levels in InGaAlP
2. First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT
3. In0.49Ga0.51P/GaAs heterostructures grown by low‐pressure metalorganic chemical vapor deposition
4. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
5. Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge;Journal of Crystal Growth;2009-11
2. Anisotropic surface structure in ordered strained InGaP;Materials Science and Engineering: B;2002-01
3. (Al)GaInP multiquantum well LEDs on GaAs and Ge;Journal of Electronic Materials;2000-01
4. Direct band gap structures on nanometer-scale, micromachined silicon tips;Applied Physics Letters;1997-06-23
5. Electrical properties of undopedGaxIn1−xP/GaAs quantum wells;Physical Review B;1996-10-15
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