Temporal decay measurement of condensate luminescence and its application to characterization of silicon-on-insulator wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1462848
Reference18 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. Silicon on insulator material technology
3. Epitaxial layer transfer by bond and etch back of porous Si
4. Characterization of bond and etch-back silicon-on-insulator wafers by photoluminescence under ultraviolet excitation
5. Defect Analysis in Bonded and H + Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
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4. Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices;Solid State Phenomena;2005-12
5. Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers;Japanese Journal of Applied Physics;2003-04-15
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