Defect Analysis in Bonded and H + Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Infrared Spectroscopic Study of Hydrogenation Process of Si(100) Surface During Hydrogen Plasma Exposure;IEEE Transactions on Plasma Science;2016-12
3. Evolution of Hydride Components Generated by Hydrogen Plasma Irradiation of a Si(110) Surface Investigated With In Situ Infrared Absorption Spectroscopy in Multiple Internal Reflection Geometry;IEEE Transactions on Plasma Science;2013-08
4. Non-Contact and Non-Destructive Characterization Alternatives of Ultra-Shallow Implanted Silicon p-n Junctions by Multi-Wavelength Raman and Photoluminescence Spectroscopy;Journal of The Electrochemical Society;2011
5. Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation;Japanese Journal of Applied Physics;2009-03-23
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