Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers-Reference-Cited by-同舟云学术

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Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers

Published:2003-04-15 Issue:Part 2, No. 4B Volume:42 Page:L429-L431
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tajima Michio,Yoshida Haruhiko,Ibuka Shigeo,Kishino Seigo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=4B/a=L429/pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing;ECS Solid State Letters;2015-05-23

2. Room Temperature Photoluminescence and Ultraviolet Raman Characterization of Boron Implanted Silicon under Various Laser Annealing Conditions;ECS Journal of Solid State Science and Technology;2012

3. Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate;Journal of Electronic Materials;2009-04-21

4. Epitaxial silicon minority carrier diffusion length by photoluminescence;Journal of Applied Physics;2008-09

5. Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices;Solid State Phenomena;2005-12

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