Room Temperature Photoluminescence and Ultraviolet Raman Characterization of Boron Implanted Silicon under Various Laser Annealing Conditions
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen
2. Correlation between Photoluminescence Lifetime and Interface Trap Density in Silicon-on-Insulator Wafers
3. Photoluminescence Mapping System Applicable to 300 mm Silicon-on-Insulator Wafers
4. Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
5. Photoluminescence of Low-Energy B+-Implanted Silicon under Ultraviolet Light Excitation
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal Characterization of a Silicon Wafer Utilizing a Non-Fourier Heat Transport Equation and Micro-Raman Spectroscopy;2023 22nd IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm);2023-05-30
2. Effects of Implant Temperature, Backside Contamination and Scribe Lines on Room Temperature Photoluminescence Measurements on Silicon;ECS Journal of Solid State Science and Technology;2021-08-01
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