Epitaxial silicon minority carrier diffusion length by photoluminescence-Reference-Cited by-同舟云学术

Epitaxial silicon minority carrier diffusion length by photoluminescence

Published:2008-09 Issue:5 Volume:104 Page:054503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Baek D. H.,Kim S. B.,Schroder D. K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2973461

Reference12 articles.

1. A. Buczkowski, in Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes VII, edited by D. K. Schroder, L. Fabry, R. Hockett, H. Shimizu, and A. Diebold (Electrochemical Society, Pennington, NJ, 2007), Vol. 11, pp. 109–122.

2. Determination of boron and phosphorus concentration in silicon by photoluminescence analysis

3. Characterization of bond and etch-back silicon-on-insulator wafers by photoluminescence under ultraviolet excitation

4. Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy

5. Characterization of bond and etch-back silicon-on-insulator wafers by photoluminescence under ultraviolet excitation

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