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Communication—In-Line Detection of Silicon Surface Quality Variation Using Surface Photovoltage and Room Temperature Photoluminescence Measurements

  • Published:2016 Issue:7 Volume:5 Page:P438-P440
  • ISSN:2162-8769
  • Container-title:ECS Journal of Solid State Science and Technology
  • language:en
  • Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Kim Jae Hyun,Han Seung Min,Yoo Woo Sik

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Degradation of Oxide Properties Caused by Low-Level Metallic Contamination

2. http://www.mee-inc.com/hamm/ion-chromatography-ic/.

3. http://www.sepscience.com/Techniques/GC/Articles/208-/GC-Solutions-11-The-Flame-Ionization-Detector.

4. http://www.eag.com/mc/analytical-techniques.html.

5. Contactless surface charge semiconductor characterization

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1. Effects of Implant Temperature, Backside Contamination and Scribe Lines on Room Temperature Photoluminescence Measurements on Silicon;ECS Journal of Solid State Science and Technology;2021-08-01

2. Effect of Macro-scale Mechanical Stress of Silicon Wafer on Room Temperature Photoluminescence Signals;Journal of Electronic Materials;2019-01-08

3. Methods for Assessing Surface Cleanliness;Developments in Surface Contamination and Cleaning, Volume 12;2019

4. References;Developments in Surface Contamination and Cleaning, Volume 12;2019

5. Communication—Room Temperature Photoluminescence Characterization of Impact of Electrical Arcing on Silicon;ECS Journal of Solid State Science and Technology;2018
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