Characterization of bond and etch-back silicon-on-insulator wafers by photoluminescence under ultraviolet excitation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118375
Reference12 articles.
1. Photoluminescence and microstructural properties of high‐temperature annealed buried oxide silicon‐on‐insulator
2. Photoluminescence studies of silicon‐on‐insulator substrates formed by oxygen implantation
3. Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
4. New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium
5. Details of the structure of bound excitons and bound multiexciton complexes in Si
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3. Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation;Japanese Journal of Applied Physics;2009-03-23
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