The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing

Author:

Ben Jianwei12,Shi Zhiming13,Zang Hang13,Sun Xiaojuan13ORCID,Liu Xinke2,Lü Wei14ORCID,Li Dabing13ORCID

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nan Hu Road, Chang Chun 130033, People's Republic of China

2. Information Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University-Hanshan Normal University Postdoctoral Workstation and College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

4. Key Laboratory of Advanced Structural Materials, Ministry of Education and Advanced Institute of Materials Science, Changchun University of Technology, Changchun 130012, China

Funder

National Key R&D Program of China

Key Programme of the International Partnership Program of CAS

National Natural Science Foundation of China

National Science Fund for Distinguished Young Scholars

Jilin Provincial Science & Technology Department

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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