Influence of surface processing and passivation on carrier concentrations and transport properties in AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1383014
Reference26 articles.
1. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
2. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
3. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
4. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
5. Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
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3. Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs;Transactions on Electrical and Electronic Materials;2023-12-07
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