Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3028235
Reference30 articles.
1. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
2. Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Critical layer thickness for self-assembled InAs islands on GaAs
5. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers;Semiconductor Science and Technology;2017-10-26
2. Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots;Japanese Journal of Applied Physics;2011-11-01
3. Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots;Japanese Journal of Applied Physics;2011-10-25
4. Studies on the resistance switching properties of the La0.5Ca0.5MnO3/Nb : SrTiO3 heterojunction;Solid State Communications;2011-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3