Flow‐rate modulation epitaxy of GaAs and AlGaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343531
Reference27 articles.
1. Summary Abstract: Optical characterization of interface disorder in multiquantum well GaAs–AlxGa1−xAs superlattice structures
2. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
3. Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE
4. Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition
5. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
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