Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN
Author:
Affiliation:
1. Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
Funder
Australian Research Council
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b01543
Reference55 articles.
1. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
2. A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
3. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
4. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN
5. Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices
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1. (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission;Nanomaterials;2023-08-24
2. Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes;ACS Applied Materials & Interfaces;2023-05-03
3. Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN;Materials;2022-12-02
4. Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal–Organic Chemical Vapor Deposition;ACS Applied Materials & Interfaces;2022-01-05
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