Polarization and charge carrier density coupling in epitaxial PbZr0.2Ti0.8O3/ZnO heterostructures
Author:
Affiliation:
1. Department of Physics and Engineering Physics, The University of Tulsa, Tulsa, Oklahoma 74104, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5048212
Reference35 articles.
1. Ferroelectric Schottky Diode
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4. Resistive Hysteresis and Diodelike Behavior of BiFeO[sub 3]/ZnO Heterostructure
5. Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures
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3. Polarization switching in Bi0.8La0.2FeO3 films with ferroelectric/semiconductor heterojunctions;Applied Physics Letters;2021-04-19
4. HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film;ACS Applied Electronic Materials;2020-08-12
5. The Pb(Zr 0.2 ,Ti 0.8 )O 3 /ZnO/GaN Ferroelectric–Semiconductor Heterostructure: Insight into the Interfacial Energy Level Alignments;Advanced Materials Interfaces;2020-05-05
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