Polarization switching in Bi0.8La0.2FeO3 films with ferroelectric/semiconductor heterojunctions-Reference-Cited by-同舟云学术

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Polarization switching in Bi0.8La0.2FeO3 films with ferroelectric/semiconductor heterojunctions

Published:2021-04-19 Issue:16 Volume:118 Page:162904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Lin¹,Lei Lin¹,Lu Xiaomei¹²^ORCID,Mei Fang³,Zhou Min¹,Hu Xueli¹,Yan Shuo¹,Huang Fengzhen¹²,Zhu Jinsong¹²^ORCID

Affiliation:

1. National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, People's Republic of China

2. Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China

3. Department of Mathematics and Physics, Luoyang Institute of Science and Technology, Luoyang 471023, People's Republic of China

Funder

National Natural Science Foundation of China

National Key Research Program of China

The Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0039567

Reference53 articles.

1. Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and Heterostructures

2. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

3. Electric-field control of magnetic order above room temperature

4. A ferroelectric memristor

5. Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures;ACS Applied Materials & Interfaces;2023-02-08

2. Ferroelectric composite artificially-structured functional material: multifield control for tunable functional devices;Journal of Physics D: Applied Physics;2022-04-04

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