Spatially and temporally resolved absolute O‐atom concentrations in etching plasmas
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359032
Reference18 articles.
1. Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas
2. Spectroscopic diagnostics of CF4‐O2 plasmas during Si and SiO2 etching processes
3. A Study of the Optical Emission from an rf Plasma during Semiconductor Etching
4. Oxygen atom actinometry reinvestigated: Comparison with absolute measurements by resonance absorption at 130 nm
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