Electron and negative ion dynamics in a pulsed 100 MHz capacitive discharge produced in an O2 and Ar/O2/C4F8 gas mixture
Author:
Funder
Science Foundation Ireland
Enterprise Ireland
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Link
https://iopscience.iop.org/article/10.1088/1361-6595/ab7086/pdf
Reference42 articles.
1. CFX(X=1–3) radical densities during Si, SiO2, and Si3N4 etching employing electron cyclotron resonance CHF3 plasma
2. Optical and electrical diagnostics of fluorocarbon plasma etching processes
3. Dielectric film etching in semiconductor device manufacturing
4. Effects of Ar and O2 additives on SiO2 etching in C4F8-based plasmas
5. A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications
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2. O2 and Ar plasma processing over SiO2/Si stack: Effects of processing gas on interface defect generation and recovery;Journal of Applied Physics;2024-02-02
3. Time-varying mechanism of ion composition in a pulse-modulated Ar/C4F8/O2 dual-frequency capacitively coupled plasma;Japanese Journal of Applied Physics;2023-12-26
4. Electron temperature measurements with a hairpin resonator probe in a pulsed low pressure capacitively coupled plasma;Plasma Sources Science and Technology;2021-06-01
5. Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O2, and Ar;Applied Surface Science;2021-03
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