Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4703938
Reference19 articles.
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2. E. Kohn and F. Medjdoub, in Proceedings of the International Workshop on Physics of Semiconductor Devices IWPSD (2007), pp. 311–316.
3. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
4. Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions
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