Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping
Author:
Affiliation:
1. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, 39106 Magdeburg, Germany
Funder
ZuGaNG
Bundesministerium für Bildung und Forschung (BMBF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4993180
Reference25 articles.
1. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
2. Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs
3. Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs
4. Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer
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