Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2723649
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1. High-Power 2.3-<tex>$mu$</tex>m GaSb-Based Linear Laser Array
2. 2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy
3. S. M. Sze, Semiconductor Devices (Wiley, New York, 2002), Chap. 8, p. 260.
4. 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
5. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
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