Low‐temperature redistribution of Cr in boron‐implanted GaAs in the absence of encapsulant stress
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92003
Reference10 articles.
1. Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4encapsulant
2. Redistribution of Cr during annealing of80Se‐implanted GaAs
3. Implantation of shallow impurities in Cr‐doped semi‐insulating GaAs
4. Back surface gettering and Cr out‐diffusion in VPE GaAs layers
5. Alloying of Au layers and redistribution of Cr in GaAs
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs;Applied Physics Letters;1994-07-04
2. Diffusion mechanism of chromium in GaAs;Journal of Applied Physics;1991-11
3. Mechanism of Cr Diffusion in GaAs;MRS Proceedings;1991
4. Implantation d'oxygène et co-implantation d'oxygène et de silicium, à faible dose, dans GaAs. I. Etude du phénomène de compensation;Revue de Physique Appliquée;1989
5. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3