Redistribution of Cr during annealing of80Se‐implanted GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91075
Reference6 articles.
1. Ion‐implanted selenium profiles in GaAs as measured by secondary ion mass spectrometry
2. Fast diffusion of elevated‐temperature ion‐implanted Se in GaAs as measured by secondary ion mass spectrometry
3. Anomalous migration of fluorine and electrical activation of boron in BF+2‐implanted silicon
Cited by 73 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Distribution mechanism of voids in Si‐implanted GaAs;Journal of Applied Physics;1991-07-15
2. Void Formation and Its Effect on Dopant Diffusion and Carrier Activation in Si-Implanted GaAs;Japanese Journal of Applied Physics;1990-11-20
3. On the Distribution Mechanism of Voids in Si-Implanted GaAs;MRS Proceedings;1990
4. Abnormal outdiffusion behavior of the deep level EL2 at the surface layer of undoped semi‐insulating GaAs;Applied Physics Letters;1987-08-31
5. Measurements of residual stress in semi-insulating GaAs by Cr-related luminescence lines;Applied Physics A Solids and Surfaces;1986-10
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