Abnormal outdiffusion behavior of the deep level EL2 at the surface layer of undoped semi‐insulating GaAs-Reference-Cited by-同舟云学术

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Abnormal outdiffusion behavior of the deep level EL2 at the surface layer of undoped semi‐insulating GaAs

Published:1987-08-31 Issue:9 Volume:51 Page:658-660
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Matsui Masayoshi,Kazuno Tadao

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.98325

Reference12 articles.

1. Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4encapsulant

2. Redistribution of Cr during annealing of80Se‐implanted GaAs

3. Outdiffusion of the main electron trap in bulk GaAs due to thermal treatment

4. Effects of stoichiometry on thermal stability of undoped, semi‐insulating GaAs

5. Photoluminescence in Mn‐implanted GaAs—An explanation on the ∼1.40‐eV emission

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EL2 Out-Diffusion in Thermally Annealed Liquid-Encapsulated Czochralski GaAs;Japanese Journal of Applied Physics;1993-11-15

2. Modeling the diffusion of hydrogen in GaAs;Journal of Applied Physics;1989-10

3. Thermal stability of EL2 in GaAs;Materials Science and Engineering: B;1989-08

4. Unpinned Schottky barrier formation at metal–GaAs interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-07

5. Thermal Stability of EL2 in GaAs;MRS Proceedings;1988

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