Fast diffusion of elevated‐temperature ion‐implanted Se in GaAs as measured by secondary ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89963
Reference4 articles.
1. Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium Arsenide
2. A double‐layered encapsulant for annealing ion‐implanted GaAs up to 1100 °C
3. Evaluation of a cesium primary ion source on an ion microprobe mass spectrometer
4. Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry
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1. Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2016
2. Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As;Applied Physics Letters;2013-12-02
3. Chapter 2 Focused Ion Beam Implantation TechnologyS;Semiconductors and Semimetals;1990
4. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
5. Transient annealing of Sn+ implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-04
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