Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4encapsulant
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90700
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1. Low-dose n-type ion implantation into Cr-doped GaAs substrates
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5. On the ion implantation of the group VI impurities into GaAs
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1. Effect of high-energy light-ion irradiation on SI-GaAs and GaAs:Cr as observed by Raman spectroscopy;Journal of Raman Spectroscopy;2011-08-12
2. The effects of temperature and oxygen concentration on the photoluminescence of epitaxial metalorganic vapor‐phase epitaxy GaAs:O;Journal of Applied Physics;1994-07-15
3. The Mechanism as SI GaAs Substrate Influences the Resistivity of the Epitaxial Layer;Crystal Research and Technology;1992
4. Diffusion mechanism of chromium in GaAs;Journal of Applied Physics;1991-11
5. Mechanism of Cr Diffusion in GaAs;MRS Proceedings;1991
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