The effects of temperature and oxygen concentration on the photoluminescence of epitaxial metalorganic vapor‐phase epitaxy GaAs:O
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357842
Reference24 articles.
1. The Preparation of Semi-Insulating Gallium Arsenide by Chromium Doping
2. Detailed electrical characterisation of the deep Cr acceptor in GaAs
3. Electron traps in bulk and epitaxial GaAs crystals
4. Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs
5. Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4encapsulant
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