Detailed electrical characterisation of the deep Cr acceptor in GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/13/i=20/a=009/pdf
Reference32 articles.
1. Schottky-barrier capacitance measurements for deep level impurity determination
2. Optical absorption on localized levels in gallium arsenide
3. Electrical compensation in semi-insulating gallium arsenide
4. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
Cited by 153 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy;Journal of Applied Physics;2021-09-14
2. Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy;Applied Physics Express;2021-08-10
3. Study of ion-implanted nitrogen related defects in diamond Schottky barrier diode by transient photocapacitance and photoluminescence spectroscopy;Japanese Journal of Applied Physics;2021-02-09
4. Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures;Applied Surface Science;2020-02
5. Deep trap analysis in green light emitting diodes: Problems and solutions;Journal of Applied Physics;2019-06-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3