Study of ion-implanted nitrogen related defects in diamond Schottky barrier diode by transient photocapacitance and photoluminescence spectroscopy

Abstract

Abstract The study of nitrogen-vacancy (NV) centers in diamond are growing attractive in the application of quantum devices. Here, electrical control of NV charge state and defects induced by nitrogen ions implantation in diamond were investigated by transient photocapacitance (TPC) spectroscopy and photoluminescence (PL) spectroscopy. The experiments show that thresholds of 1.2 eV appeared in TPC spectra are probably due to the presence of excited defect energy levels related to vacancy or NV center. Alternatively, the 2.2 eV defect observed in the TPC spectrum is probably attributed to NV centers. The variation of TPC and PL spectra with different applied voltages suggests that bias voltages control the charge state of NV centers since their effect on the Fermi level shifting in the depletion region. Furthermore, the steady-state photocapacitance indicates that the 2.2 eV deep trap slows down the process of photocapacitance rise and fall, and these processes can be enhanced by a higher electrical field.