Implantation of shallow impurities in Cr‐doped semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91259
Reference6 articles.
1. On the ion implantation of the group VI impurities into GaAs
2. Low-dose n-type ion implantation into Cr-doped GaAs substrates
3. Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4encapsulant
4. Fast and nondestructive method of C(V) profiling of thin semiconductor layers on an insulating substrate
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1. Investigation on P-buried GaAs MESFETs;ESSDERC ’89;1989
2. In-doped GaAs substrate assessment for thin film applications;Materials Letters;1987-03
3. Zn gettering in InGaAs/InP interfaces;Journal of Applied Physics;1986-04
4. Diffusion of chromium in gallium arsenide;Journal of Applied Physics;1986-04
5. Temperature dependence of FET properties for Cr-doped and LEC semi-insulating GaAs substrates;IEEE Transactions on Electron Devices;1984-01
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