The effect of background doping and dose on diffusion of ion‐implanted tin in gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345366
Reference20 articles.
1. SUPREM 3.5-process modeling of GaAs integrated circuit technology
2. Influence of boron on tin induced interdiffusion in GaAs‐Ga0.72Al0.28As superlattices
3. The system Ga–As–Sn: Incorporation of Sn into GaAs
4. Diffusion of Tin in Gallium Arsenide
5. The effect of arsenic pressure on impurity diffusion in gallium arsenide
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of a tin liquid metal ion source;Applied Physics A;2004-06
2. Effects of predoping and implantation conditions on diffusion of silicon in gallium arsenide subjected to electron-beam annealing;Semiconductors;2004-03
3. Extended defects of ion‐implanted GaAs;Journal of Applied Physics;1991-12
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