Influence of boron on tin induced interdiffusion in GaAs‐Ga0.72Al0.28As superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98089
Reference7 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
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3. Disordering of Ga1−xAlxAs‐GaAs quantum well structures by donor sulfur diffusion
4. Effects of Be and Si on disordering of the AlAs/GaAs superlattice
5. Investigation of compensation in implantedn‐GaAs
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