Effects of predoping and implantation conditions on diffusion of silicon in gallium arsenide subjected to electron-beam annealing-Reference-Cited by-同舟云学术

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Effects of predoping and implantation conditions on diffusion of silicon in gallium arsenide subjected to electron-beam annealing

Published:2004-03 Issue:3 Volume:38 Page:253-257
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ardyshev M. V.,Ardyshev V. M.,Kryuchkov Yu. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1682321.pdf

Reference11 articles.

1. M. V. Ardyshev and V. M. Ardyshev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1153 (1998) [Semiconductors 32, 1029 (1998)].

2. M. V. Ardyshev, V. M. Ardyshev, and S. S. Khludkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 70 (2000) [Semiconductors 34, 70 (2000)].

3. M. V. Ardyshev, V. M. Ardyshev, and S. S. Khludkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 28 (2000) [Semiconductors 34, 27 (2000)].

4. M. V. Ardyshev and V. M. Ardyshev, Izv. Vyssh. Uchebn. Zaved., Fiz. 41(11), 44 (1998).

5. V. M. Ardyshev, V. A. Selivanova, O. N. Korotchenko, and A. P. Mamontov, Inventor’s Certificate No. 235,899 (1 April 1986).

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