Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding-Reference-Cited by-同舟云学术

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Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding

Published:2011-05-16 Issue:20 Volume:98 Page:201112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Charash R.,Kim-Chauveau H.,Lamy J-M.,Akther M.,Maaskant P. P.,Frayssinet E.,de Mierry P.,Dräger A. D.,Duboz J-Y.,Hangleiter A.,Corbett B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3589974

Reference13 articles.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance

2. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal

3. Group III‐nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy

4. Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications

5. Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition;Journal of Alloys and Compounds;2024-12

2. Low threshold current density in GaInN-based laser diodes with GaN tunnel junctions;Applied Physics Express;2021-05-20

3. 450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers;Japanese Journal of Applied Physics;2019-05-23

4. Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers;Acta Optica Sinica;2019

5. Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors;Japanese Journal of Applied Physics;2016-04-21

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