Low threshold current density in GaInN-based laser diodes with GaN tunnel junctions

Author:

Kato Yuki,Miyoshi Kohei,Takeuchi Tetsuya,Inagaki Tetsuro,Iwaya Motoaki,Kamiyama Satoshi,Akasaki Isamu

Abstract

Abstract We demonstrated room-temperature pulsed-operations of GaN-based blue edge-emitting laser diodes (LDs) with both the top and bottom AlInN cladding layers by using GaN tunnel junctions (TJs) grown by metalorganic vapor phase epitaxy. The LDs with a 1.2 mm cavity length and a 15 μm ridge width were fabricated. We obtained a low threshold current density of 0.9 kA cm−2 with facet coating. We found that while an optical absorption loss in the waveguiding layer was reduced with a low Mg concentration (3 × 1018 cm−3), that in a highly doped TJ could be an obstacle to obtain further improvements of the laser characteristics.

Funder

MEXT Private University Research Branding Project, JSPS KAKENHI for Innovative Areas

MEXT “Program for research and development of next-generation semiconductor to realize energy-saving society”

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

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