Group III‐nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy-Reference-Cited by-同舟云学术

Group III‐nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy

Published:2004-04 Issue:6 Volume:1 Page:1537-1548
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Schenk H. P. D.¹,Czernecki R.¹,Krowicki K.¹,Targowski G.¹,Grzanka S.¹,Krysko M.¹,Prystawko P.¹,Wisniewski P.¹,Leszczynski M.¹,Teisseyre H.¹,Franssen G.¹,Muszalski J.²,Suski T.¹,Perlin P.¹

Affiliation:

1. Unipress, ul. Sokolowska 29/37, 01‐142 Warszawa, Poland

2. Institute of Electron Technology, Al. Lotnikow 32/46, 02‐668 Warszawa, Poland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304099

Reference55 articles.

1. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

2. Blue-Laser Structures Grown on Bulk GaN Crystals

3. Blue-Violet Nitride Lasers

4. Blue-Violet Laser Diodes Suitable for Blu-ray Disk

5. Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes

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